|1987.0487.349||Texas Instruments Collection||Object|
|Silicon Crystal - 1956
TI number: G00005
This item is half of an experimental silicon grown junction transistor crystal grown by Walt Runyan in about 1956.
After being grown in a helium atmosphere, a crystal was cut in half and a resistivity profile measured. If acceptable, the crystal was cut into transistor bars with the junction approximately in the middle. The characteristics of the transistors were established when the crystal was grown. The crystal design and growing procedure was established in the spring of 1954, resulting in the first available production silicon transistor.
Related material in collection: G00020.
|Texas Instruments (Willis Adcock, Jim Lacy, Howard Moss, Walt Runyan.)