|1987.0487.390||Texas Instruments Collection||Object|
|Silicon, Grown Junction Power Transistor - 1955
TI number: G00040
First silicon power transistor. Used only for experimental and development work within TI. Work was done in 1955.
Used 1/8" x 1/8" x 1/4" bar with collector end soldered to copper header. Device was developed in conjunction with the TI Apparatus Division and used in an experimental replacement servo-amplifier unit for Minneapolis-Honeywell. Feasibility was proven, but no production design was made. Item was part of original S/B Lobby display. This device was the basis of the design for the TI970 (G00045 and 46).
|Texas Instruments (Jim Lacy, Howard Moss, Harry Owens.)