1987.0487.390 Texas Instruments Collection Object

Silicon, Grown Junction Power Transistor - 1955
TI number: G00040

First silicon power transistor. Used only for experimental and development work within TI. Work was done in 1955.

Used 1/8" x 1/8" x 1/4" bar with collector end soldered to copper header. Device was developed in conjunction with the TI Apparatus Division and used in an experimental replacement servo-amplifier unit for Minneapolis-Honeywell. Feasibility was proven, but no production design was made. Item was part of original S/B Lobby display. This device was the basis of the design for the TI970 (G00045 and 46).
Texas Instruments (Jim Lacy, Howard Moss, Harry Owens.)

Contact Nance L. Briscoe for further information



National Museum of American History


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