Texas Instruments Collection Transistor
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Summary comments provided by Texas Instruments' staff.

G00083   NMAH Catalog Number 1987.0487.003
TI number: G00083
Photo Available Receiver, Transistorized - 1954-55 - One of the first transistorized radios following Regency. It was designed and built with TI devices in Engineering to demonstrate feasibility in 1954-55.

This item was part of the original S/B Lobby display. This radio was shown to potential customers to promote the idea of a small transistorized portable radio.

Related material in collection: G00084, 85, 106.
Summary comment by: Jim Nygaard, Roger Webster.
G00269   NMAH Catalog Number 1987.0487.029
TI number: G00269
Transistor, Silicon Grown Junction - The display is a block of Lucite containing an open and a sealed example of each of the TI904, 2N117 and 2N332 TI silicon grown junction transistors.

The three transistors represented by these devices differed only in packaging. The solder sealed package was used for the original silicon transistor series in 1954. The oval welded seal package was introduced by TI in 1956 and was the first TI welded package. The rounded welded package, 2N332 series, was introduced in 1957 to use the industry standard JEDEC TO-5 outline which TI was instrumental in developing.

Related material in collection: TI904: G00006,7 2N117: G00008, 9, 47 2N332: G00010, 11, 20, 48.
Summary comment by: Jim Lacy, Howard Moss, Harry Owens.
G00270   NMAH Catalog Number 1987.0487.030
TI number: G00270
Transistor, Silicon Grown Junction - The display is a block of Lucite containing an open and a sealed example of the 2N337 silicon grown junction transistor.

The 2N337-8 transistors were introduced in 1957 by TI to provide silicon switching transistors. The higher frequency operation was achieved by a major reduction in the silicon bar cross section compared to that of the 2N332 series.

Summary comment by: Jim Lacy, Howard Moss, Harry Owens.
G00271   NMAH Catalog Number 1987.0487.031
TI number: G00271
Transistor, Silicon Mesa - The display is a block of Lucite containing an open and a sealed example of the 2N497 silicon mesa medium power transistor.

TI introduced the 2N497 in 1957, and it was the first silicon medium power transistor available to the industry. Using a mesa structure, the device was rated at 200 mA collector current and 4 W dissipation at 25 degrees C.

Related material in collection: G00103.
Summary comment by: Howard Moss, Harry Owens.
G00272   NMAH Catalog Number 1987.0487.032
TI number: G00272
Transistor, Silicon Mesa Power - The display is a block of Lucite containing an open and a sealed example of the 2N389 silicon mesa power transistor.

TI introduced the 2N389 in 1957, and it was the first silicon high power transistor available to the industry. Using a mesa structure, the device was rated as 2 A collector current and 85 W dissipation at 25 degrees C.

Related material in collection: G00050-1.
Summary comment by: Howard Moss, Harry Owens.
G00273   NMAH Catalog Number 1987.0487.033
TI number: G00273
Transistor, Silicon Mesa Power - The display is a block of Lucite containing an open and a sealed example of the 2N1047 silicon mesa power transistor.

TI introduced the 2N1047 in early 1958. Using a mesa structure, it was designed to handle requirements between those served by the 2N497 and those needing the 2N389.

Related material in collection: G00028.
Summary comment by: Howard Moss, Harry Owens.
L00267   NMAH Catalog Number 1987.0487.039
TI number: L00267
Photo Available Carrier, Transistor - This item is a transistor carrier of the design used in the early CAT's. A transistor and a blue card were hand loaded into each carrier. See photographs PL00006 & 7 and PG00008 and their Photograph Identification Sheets for an operating description.

In 1959 and 1960, there was a continuous contest to get record test throughput on a tester in a 24 hour period. When a new record was set, the operators of that tester were presented personal carriers with a standard card signed by Norm Provost and Mark Shepherd, the department and division managers respectively. Nygaard was a key participant in the CAT program from the start and was actively engaged in getting the first testers up to maximum throughput; hence this award tied to what was probably the maximum for any 24 hour period for the original testers.

Related material in collection: G00268, PL00006, 7, PG00020.
Summary comment by: Ed Millis, Jim Nygaard.
G00268   NMAH Catalog Number 1987.0487.041
TI number: G00268
Photo Available Carrier, Transistor - This carrier represents the last design and was used on the version called the Super CAT.

A comparison with L00267 shows the changes made in carrier design over the lifetime of the CAT's. The material was changed to ceramic and steel to withstand the high temperature testing; material was removed to reduce the weight for higher speed movement; contacts were redesigned to permit testing at higher frequencies and faster movement through the test stations; and the punch card was replaced by the use of a TI 960 microcomputer. See PG00020 for additional information on the Super CAT.

Related material in collection: L00267, PL00006, 7, PG00020.
Summary comment by: Ed Millis, Jim Nygaard.
G00085   NMAH Catalog Number 1987.0487.046
TI number: G00085
Photo Available Receiver, Transistorized - This radio was built with experimental glass encapsulated transistors in 1957-8 for demonstration to potential semiconductor customers.

This item was part of the original S/B Lobby display. Glass encapsulation was considered as a potential cost reduction over the glass and metal package. However, the process lost out to plastic for a low cost process.

Summary comment by: Jim Nygaard, Roger Webster.
G00028   NMAH Catalog Number 1987.0487.051
TI number: G00028
Photo Available Transistor Fabrication Display - Shows process steps involved in the fabrication of the 2N1047 series of diffused mesa silicon power transistors. The 2N1047 was introduced in early 1958.

Item was part of original S/B Lobby display.

Related material in collection: G00273.
Summary comment by: Howard Moss, Harry Owens, Elmer Wolff.
Z00024   NMAH Catalog Number 1987.0487.052
TI number: Z00024
Photo Available Receiver, Transistorized - This radio was a joint design effort between TI and Delco and represented the first effort to place a fully transistorized radio in automobiles. The concept was a radio that could easily be removed to operate as a portable.

The radio was introduced as an Oldsmobile option. The radio worked well, but it proved to be so easily stolen that it was dropped by GM. Included is the dashboard mounting unit. This work was done in 1957-8.

Summary comment by: Bernie Landress, Roger Webster.
Z00393   NMAH Catalog Number 1987.0487.053.01
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *4 pcs. 2N67 germanium point contact transistors by Western Electric, early 1955 on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.053.02
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *4 pcs. 2N67 germanium point contact transistors by Western Electric, early 1955 on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.053.03
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *4 pcs. 2N67 germanium point contact transistors by Western Electric, early 1955 on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.053.04
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *4 pcs. 2N67 germanium point contact transistors by Western Electric, early 1955 on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.054
TI number: Z00393
Transistor, Germanium Alloy - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies.

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.055.01
TI number: Z00393
Transistors, Germanium Grown Junction - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *2 pcs. 2N29 and 2 pcs. 3N22 germanium grown junction by Western Electric, February, 1956, on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.055.02
TI number: Z00393
Transistors, Germanium Grown Junction - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *2 pcs. 2N29 and 2 pcs. 3N22 germanium grown junction by Western Electric, February, 1956, on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.056.01
TI number: Z00393
Transistors, Germanium Grown Junction - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *2 pcs. 2N29 and 2 pcs. 3N22 germanium grown junction by Western Electric, February, 1956, on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.056.02
TI number: Z00393
Transistors, Germanium Grown Junction - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. *2 pcs. 2N29 and 2 pcs. 3N22 germanium grown junction by Western Electric, February, 1956, on IPS contract (Manufacturing Methods) *{Items verified from TI file of early registrations. Date registered not know, but final registration made in 1961 with note that devices were not in production. More registration information may be available at EIA office.}

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.057
TI number: Z00393
Transistors, Germanium Alloy - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. 1 pc. CK727 by Ratheon, probably germanium alloy, about 1955.

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.058
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. 1 pc. GT442 germanium point contact by Sylvania, about 1955.

Summary comment by: Howard Moss, Harry Owens.
Z00393   NMAH Catalog Number 1987.0487.059
TI number: Z00393
Transistors, Germanium Point Contact - These are very early transistors fabricated in the 1954-6 period by manufacturers other than TI. They provide good examples of the variety of designs and fabrication methods in use at that time.

At the time these devices were collected by Moss, he was at the U.S. Army Signal Corps Lab, Ft. Monmouth, N.J. with responsibility for technical monitoring of contracts issued by the Lab and the Signal Supply Agency for semiconductor development and Industrial Preparedness Studies. See G00337-G00330 for TI transistors on which work was performed under one of these studies. 1 pc. 2N23, probably germanium point contact by Western Electric, July, 1953 (Manufacturing Methods)

Summary comment by: Howard Moss, Harry Owens.
G00350   NMAH Catalog Number 1987.0487.063
TI number: G00350
Test Fixture, Transistor - This item is an early transistor test fixture from the 1950's. Fixtures of this type were commonly used at TI for both production and laboratory testing in the early days. They had to be built internally because nothing of the type needed was commercially available at the time.

Even after fixtures and equipment designed for volume testing became available, this type socket continued in wide use for some time in Engineering and Quality Assurance for miscellaneous testing.

Summary comment by: Steve Karnavas, Jim Lacy, Bob Wallace.
G00084   NMAH Catalog Number 1987.0487.075
TI number: G00084
Photo Available Receiver, Transistorized - This was the first transistorized auto radio built at TI. It was built in Engineering using TI devices as a prototype to demonstrate feasibility to Delco for use in GM cars. Work was done in 1955.

This item was part of the original S/B Lobby display. The dash mounted radio and the speaker were included in the same case for convenience in carrying.

Related material in collection: Z00024.
Summary comment by: Roger Webster.
Z00341   NMAH Catalog Number 1987.0487.078
TI number: Z00341
Receiver, Transistorized - This radio was designed and built around a TI eight transistor kit in 1957. Although labeled as a pocket radio by Emerson, it was larger than usual for that designation. The design utilized eight transistors for improved performance.

At the time of the design of this radio, the usual procedure was to design for the minimum number of transistors to keep component costs low. However, it was found that the specifications for four of the transistors could be relaxed enough to improve yields considerably. As a result, the eight transistor kit cost only slightly more than the conventional four or six transistor kits.

Summary comment by: Jim Lineback, Jim Nygaard.
G00362   NMAH Catalog Number 1987.0487.091
TI number: G00362
Transistor, Silicon Dual - This device is one of the types supplied by TI for use in the Minuteman II and III missile guidance systems. The package contains two chips of the same type connected independently to the external leads.

This type of packaging was developed in early 1963 for the Minuteman II program. The package required much less space per transistor and made use of the same board mounting technique used for integrated circuits. The device is shown in a Mech Pak carrier which was used for testing. Devices meeting specifications were clipped out of the carrier and had the leads formed prior to shipment. This device type was produced at TI into 1978 for the Minuteman II and III missile programs.

Summary comment by: John Gibson, Ed Kamradt, Wayne Richey.
G00363   NMAH Catalog Number 1987.0487.092.01
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.02
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.03
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.04
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.05
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.06
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.07
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.08
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00363   NMAH Catalog Number 1987.0487.092.09
TI number: G00363
Transistors, Silicon Dual -

Need program and carrier identification?

G00365   NMAH Catalog Number 1987.0487.094
TI number: G00365
Thyristor - This device is a TI plastic encapsulated silicon thyristor intended for industrial and consumer applications. The mounting flange provided a heat dissipation path.

The packaging was designed for low cost mechanized assembly. The device series ratings were 600mAdc and up to 200Vdc. The code "A638A" indicates USA fabrication in 1976, 38th week and lot A for that week. TI halted production of this device line about 1980.

Summary comment by: Hoyt Cowling, Dave Jasper.
G00336   NMAH Catalog Number 1987.0487.095.01
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8.
Summary comment by: Jim Lacy, Howard Moss, Harry Owens.
G00336   NMAH Catalog Number 1987.0487.095.02
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8.
Summary comment by: Jim Lacy, Howard Moss, Harry Owens.
G00336   NMAH Catalog Number 1987.0487.095.03
TI number: G00336
Transistors, Silicon Grown Junction - These TI951 transistors were built in April, 1956, (date code 614). They were checked on 1/3/86 and found to have somewhat degraded current gains (beta) but no severe degradation of breakdown voltage.

This series used the original TI grown junction transistor construction in the oval solder sealed package. It was rated a medium power device at 750mW. dissipation at 25 degrees C. vs. 150mW for the small signal. This capability was the result of the mounting clamp heat sink and an alumina filled silastic compound sealed in the package. The silastic required a heat cure prior to the sealing operation. The 1/3/86 readings are in the Artifact Historical Files.

Related material in collection: G00127, 8.
Summary comment by: Jim Lacy, Howard Moss, Harry Owens.
G00337   NMAH Catalog Number 1987.0487.096.01
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9.
Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.
G00337   NMAH Catalog Number 1987.0487.096.02
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9.
Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.
G00337   NMAH Catalog Number 1987.0487.096.03
TI number: G00337
Transistors, Silicon Grown Junction - This transistor, 2N208, was the original oval welded package type designed and built at TI. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703.

The contract was for Industrial Preparedness Study on Silicon Transistors, usually referred to as a Manufacturing Methods contract, covering the period October, 1954, to April, 1957. The objective was to design three grown junction silicon transistors for use in military equipment and the procedures and tooling for their fabrication and testing. A welded package was required to replace the original TI solder sealed package. Another major improvement resulting from this work was a process for soldering the silicon bar to the header leads. The contract specification was based on the original TI901-2 transistors and engineering estimates of what was needed and might be achieved. This device, designated Type 22-B, was covered by MIL-T-12679A/22B (Sig C) and was registered as RETMA type 2N208. In late 1954, TI super ceded the 901-2 types with 903-5 types. These were designed into the early circuit applications for production; therefore, the 2N208 was built only for contract requirements. With the welded package, TI introduced and registered types 2N117-9 with the same or slightly tighter parameter limits as the 903-5. Military specifications were issued for the 2N117, 8 & 9, and TI became the first qualified supplier of Mil Spec silicon transistors. The three transistors were checked on 1/3/86. Current gain (beta) was still good, and there appeared to be no serious degradation of breakdown voltage. A copy of the contract final report and the 1/3/86 test results are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 338, 9.
Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.
G00338   NMAH Catalog Number 1987.0487.097
TI number: G00338
Transistors, Silicon Grown Junction - The 3N28 represents the first production high frequency silicon transistors. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No. DA-36-039-SC-54703. The package and the tetrode configuration are of interest. The tetrode was the only design at the time that permitted satisfactory operation at elevated temperatures.

The contract specification, MIL-T-12679A/23B(Sig C), was for a 4.3 MHz I.F. transistor. To start, state-of-the-art triodes were built. These units were acceptable except for a severe decrease in gain at elevated temperatures. Because of the results with another device (G00339), it was decided to use the tetrode design. Recognizing the need for high frequency devices, TI introduced types 924-7 in early 1956 while proceeding with the contract effort. Power gains were specified at 4.3, 12.5, 30 & 70 MHz respectively. JEDEC type numbers for these specifications in the TO-12 package outline were issued in 1957 as 2N32-5. Specification formats were rapidly evolving with increased industry applications, and this series followed the newer format rather than that of the contract. The 3N28 met its requirements but was supper ceded for production by its equivalent, the 3N32. Subsequent market and yield and experience led to production of only the 3N34 & 5, which were the only types for which registration was completed in 1958. This device is not in the correct package for the 3N28. However, because of the source, the accompanying material and the dipped painting, it likely it was built on the contract line and met specifications. Engineering work on this package was done on that line at the time. For additional information on the package, see G00339. The 3N28 indicated that it likely met specifications when completed. A lab check on 1/3/86 showed it still to have reasonable current gains (beta) and no severe degradation of breakdown voltage. These test readings and contract final report are in the Artifact Historical Files.

Related material in collection: G00008, 9, 47, 337, 9.
Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.
G00339   NMAH Catalog Number 1987.0487.098
TI number: G00339
Transistors, Silicon Grown Junction - These 3N24 transistors represent production of the first silicon high frequency transistors. The work was performed in 1954-7 as part of the effort on U.S. Army Signal Corps Contract No: DA-36-039-SC-54703. The package and the tetrode configuration are of interest.

The contract specification, MIL-T-12679A/24B(Sig C), was for a 12.5 MHz I.F. transistor. After evaluating state-of-the-art triodes, it was decided to use the tetrode design. The 3N24 satisfactorily met the contract requirements; however, it was super ceded by the 3N33 for production. (See G00338 for details.) These units were surplus from the contract pilot manufacturing line. The symbolization indicates they met specifications at the time. The "980715" is the TI Federal Stock Number, 980, and the Manufacturing Date Code, 715, which is for the 15th week of 1957. The three devices were given a limited lab check on 1/3/86. Current gain (beta) was reasonable, and there appeared to be no serious degradation of breakdown voltage. These test results and a copy of the contract Final Report are in the Artifact Historical Files. The package size designation was listed as JETEC Group 30. The lead pitch circle diameter of .200" fitted the industry preference for the .100" printed board grid. Also, it was more convenient for use with the tetrode structure. Although it was used for this project, TI recognized several shortcomings. The limited glass thickness between the leads and the rim offered potential leaks from the stress of welding and lead handling. The position of the weld flange provided chance for flash to enter package and/or the eyelet rim to separate from the glass, breaking the hermetic seal. Consequently, TI initiated a modification which slightly increased the outside diameter and allowed the flange to be at the bottom. This became the industry standard JEDEC TO-5 for triodes and TO-12 for tetrodes.

Related material in collection: G00008, 9, 47, 337, 8.
Summary comment by: Charley Earhart, Howard Moss, Harry Owens, Bob Wallace.
G00332   NMAH Catalog Number 1987.0487.112
TI number: G00332
Transistor, Silicon Dual - This was the first dual transistor chips packaged in the 1/4in x 1/4in metal flatpack at TI. The manufacturing date was January, 27 1969. Some of the final fabrication steps were performed by the product engineer, Fritz Whittington.

This work was done on the Lockheed M & S controlled line for the Poseidon Program. This line was operated under rigidly controlled conditions for high reliability. TI had been manufacturing dual transistor since 1963 in the 1/8" x 1/8" metal flatpack for the Minuteman Program. The 1/4" x 1/4" package was chosen for the Poseidon because it was easier to handle and space was available.

Summary comment by: Bill Brower, Fritz Whittington.
G00435   NMAH Catalog Number 1987.0487.113
TI number: G00435
Packages, Hearing Aid Transistor - This package was designed in 1954 by TI and the package supplier for use in hearing aids. The goal was the smallest practical package in which a germanium grown junction transistor could be assembled. Also, adequate glass was required for electrical insulation.

This solder sealed package was successfully used for hearing aid transistors for a couple of years. The users switched to alloy type transistors for lower noise, and TI chose not to pursue the business because of the production demands of the germanium radio and the silicon transistors. This same package, minus the center lead, was used for silicon diodes which were introduced about March, 1954. Various types of diodes in this package were in production for several years.

Summary comment by: Norman Ince, Jim Lacy, Mark Shepherd.
Z00411   NMAH Catalog Number 1987.0487.131
TI number: Z00411
Receiver, Transistorized - This radio is an early production model, S/N 11520, of the Regency pocket radio. From the serial number and the type of symbolization on the transistors, the radio was built no later than early in the first quarter of 1955.

See Related Material and the Artifact Historical Files for additional information.

Related material in collection: G00107, Z00108, 109, 409.
Summary comment by: Boyd Cornelison, Paul Davis, S.T. Harris, Jim Nygaard, Roger Webster.
G00436   NMAH Catalog Number 1987.0487.132
TI number: G00436
Transistor Demonstration, Germanium - This item is part of the amplifer for a 45 rpm record player which was used in demonstrations of the tolerance silicon transistor have for high temperatures. The circuit on this paddle contains germanium grown junction transistors.

A companion paddle using some of the original experimental silicon transistors was also used in the demonstration. The record player was operated using the germanium paddle which was then dipped into a beaker of hot oil. As the transistors heated up, the sound died out. The silicon amplifier paddle was then connected and the procedure repeated. In this case, as the transistors heated up the sound continued with no change. This equipment was first used by Gordon Teal in his May 10, 1954, talk in which he announced that TI had silicon transistors in production. The demonstration was repeated numerous times for customer visits and trade exhibits. The silicon paddle and the 45 rpm record player have been lost in the interim moves and shuffles. For additional information, see the copy of Teal's talk at the 25th Anniversary Observance Transistor Radio and Silicon Transistor. The booklet is in the Artifact Historical Files under Z00107-8, G00124 and G00436.

Related material in collection: G00124.
Summary comment by: Willis Adcock, Gordon Teal.
G00407   NMAH Catalog Number 1987.0487.133
TI number: G00407
Transistor, Silicon Planar - This item is an example of the first significant planar transistor made at TI. The work was done in 1961.

The planar process was invented at Fairchild Semiconductor in 1959. This process capability, which was developed at TI in early 1961, solved surface generated problems and resulted in major improvement in yield and reliability. TI produced transistors for the Polaris and Minuteman I programs with this process, which became standard for all small signal and most power transistors. Included is a drawing illustrating the chip construction. The display was part of the original South Building lobby exhibit. The transistor shown is a 2N1893, a JEDEC registered type number, which was one of the first TI planar types. The chip is representative of the type used for Polaris and Minuteman I. The transistor shown has a date code of 009 (ninth week of 1970). At the time of this documentation, a search is being made for a transistor manufactured nearer to the date of the introduction of the process.

Summary comment by: Mort Jones, Jim Naygaard.
G00413   NMAH Catalog Number 1987.0487.140
TI number: G00413
Transistor Display - The germanium alloy diffused process was developed at TI in about 1958. It offered a significant improvement in performance over the standard alloy process, particularly in switching times.

The transistor shown is a 2N1046 type which was introduced in the early 1960's and was in production at TI until the mid 1970's. It was rated at 50W dissipation at 75 degrees C case temperature and capable of operation to 20mHz. Shown is an uncapped device, the germanium chip, chip with emitter ring, chip with base dot and ring and the performance for mounting the completed chip to the header. The chip and the emitter and base connectors to the header were furnace assembled in a one pass operation.

Summary comment by: Jim Lineback, Elmer Wolff.
G00414   NMAH Catalog Number 1987.0487.158
TI number: G00414
Transistor, Silicon Power, Special - This transistor is representative of the radiation tolerant power transistors developed by TI. The type designation indicates a "special device", the TI term of a variation of a standard device with specifications for one customer.

This transistor is date coded 6916. The leads indicate that it was probably used for some engineering evaluation in TI. The ceramic insert in the cap is typical of radiation tolerant transistors. The device design was done in the mid 1960's. The customer was Bendix, Kansas City, indicating use in a nuclear weapon application. This type was produced until about 1978. Transistors with several variations of the basic chip design are still being produced.

Related material in collection: G00415.
Summary comment by: Dave Jasper, Fan Shao.
G00415   NMAH Catalog Number 1987.0487.159
TI number: G00415
Transistor, Silicon Power - The TIXP40 was an experimental radiation tolerant silicon power transistor developed in the mid 1960's. The "TIXP" designates it as an experimental design for a specific customer application. The specifications were registered with JEDEC in 1970 and designated 2N5940.

This transistor has a 6916 date code and apparently was soldered into a circuit for evaluation. The 2N5940 is still being produced by TI.

Related material in collection: G00415.
Summary comment by: Dave Jasper, Fan Shao.
G00390   NMAH Catalog Number 1987.0487.178
TI number: G00390
Transistor Kit - These kit's were used as marketing 'give-aways' in the latter 1950's to publicize both TI and transistors. At that time, there was still a lot of resistance to the use of transistors among circuit designers.

The device has a germanium grown junction bar soldered into the header. In the capsule is a gold wire which in production would be bonded to the base layer of the bar and soldered or welded to the header base lead (center lead).

Summary comment by: Steve Karnavas, Howard Moss, Harry Owens.
G00340   NMAH Catalog Number 1987.0487.180
TI number: G00340
Transistor Automated Tape Assembly Display - SATAN was a TI project of 1970-72 that produced an automated assembly on tape of germanium transistors designed for thick film hybrid circuit applications.

SATAN was an acronym for Semiconductor Automated Tape Assembly with the "N" added to become SATAN. The construction is described in bulletins and data sheets in the Artifact Historical Files. The assembly was not fully automatic. Positioning for chip mounting, wire bonding and epoxy application was operator controlled with the use of TV monitors. The operation was activated by an operator controlled switch. The equipment was designed and built in the TI Deutschland plant. SATAN devices were especially designed to provide the thick film hybrid user with the ability to fabricate systems using a single mounting technique for all components. Also, these devices could be mounted in a TO-18 package if desired, as shown in the display. Production rates reached approximately 50k units per month for over a year. The principal customer was RCA Indianapolis for the XL100 color television audio circuit. Small quantities were used by others, such as Zenith. The limited hybrid thick film applications resulted in cancellation of the project.

Summary comment by: John Burge, Lee Kitchens.
G00117   NMAH Catalog Number 1987.0487.181
TI number: G00117
Transistor Display, Silicon Small Signal - These kits were used in the 1960's and early 1970's by Product Marketing and Field Sales Engineers in customer discussions.

The purpose of this sales tool was to show readily the wide variety of packages available and the device geometries used. The kit contains samples of various transistors, capped and uncapped, in various packages. Also is shown a picture of transistor types with the corresponding package and geometry designations.

Summary comment by: John Gibson, Jim Owens, Bob Zlotky.
G00201   NMAH Catalog Number 1987.0487.197
TI number: G00201
Transistor, Germanium Alloy - Item is an early (probably late 1954) alloy germanium transistor which has had the can removed to show construction details. At canning, the unit was filled with a compound called glimp to increase the heat dissipation.

This was a solder sealed device.

Summary comment by: Jim Lineback, Elmer Wolff.
G00202   NMAH Catalog Number 1987.0487.198
TI number: G00202
Transistor, Germanium Alloy - Item is an early (1956-7) alloy germanium transistor which has had the can removed to show construction details. The solid kovar header to which the can was welded provided increased heat dissipation.

Related material in collection: G00203.
Summary comment by: Jim Lineback, Elmer Wolff.
G00203   NMAH Catalog Number 1987.0487.199.01
TI number: G00203
Transistor, Germanium Alloy - These transistors were built in 1956 and represent one of the early designs.

The package design was a TI predecessor to the standard JEDEC TO-11. The header was gold plated for corrosion resistance, and the package was painted black to provide corrosion resistance for the can plus increased heat dissipation. In the symbolization, "980" was the Federal Stock Code for TI; "639" was the manufacturing date code for 1956, 39th week. See G00202 for internal construction.

Related material in collection: G00202.
Summary comment by: Jim Lineback, Elmer Wolff.
G00203   NMAH Catalog Number 1987.0487.199.02
TI number: G00203
Transistor, Germanium Alloy - These transistors were built in 1956 and represent one of the early designs.

The package design was a TI predecessor to the standard JEDEC TO-11. The header was gold plated for corrosion resistance, and the package was painted black to provide corrosion resistance for the can plus increased heat dissipation. In the symbolization, "980" was the Federal Stock Code for TI; "639" was the manufacturing date code for 1956, 39th week. See G00202 for internal construction.

Related material in collection: G00202.
Summary comment by: Jim Lineback, Elmer Wolff.
G00203   NMAH Catalog Number 1987.0487.199.03
TI number: G00203
Transistor, Germanium Alloy - These transistors were built in 1956 and represent one of the early designs.

The package design was a TI predecessor to the standard JEDEC TO-11. The header was gold plated for corrosion resistance, and the package was painted black to provide corrosion resistance for the can plus increased heat dissipation. In the symbolization, "980" was the Federal Stock Code for TI; "639" was the manufacturing date code for 1956, 39th week. See G00202 for internal construction.

Related material in collection: G00202.
Summary comment by: Jim Lineback, Elmer Wolff.
G00167   NMAH Catalog Number 1987.0487.212.01
TI number: G00167
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI with a wide variety of silicon and germanium chips.

The devices did not have the caps mounted. For the various silicon chips used, normally the rated power dissipation is 85W at 100 degrees C case; rated collector current is up to 30A continuous and the breakdown voltage about 80V. The header and cap are nickel plated copper sealed by a cold weld.

Related material in collection: G00168
Summary comment by: Ed Allison; Jim Lineback.
G00167   NMAH Catalog Number 1987.0487.212.02
TI number: G00167
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI with a wide variety of silicon and germanium chips.

The devices did not have the caps mounted. For the various silicon chips used, normally the rated power dissipation is 85W at 100 degrees C case; rated collector current is up to 30A continuous and the breakdown voltage about 80V. The header and cap are nickel plated copper sealed by a cold weld.

Related material in collection: G00168
Summary comment by: Ed Allison; Jim Lineback.
G00168   NMAH Catalog Number 1987.0487.213.01
TI number: G00168
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI for a wide variety of silicon and germanium chips since the early 1960's.

These are flange mounted packages with the caps welded to the header. The header and cap are nickel plated copper sealed by a cold weld. The leads are glass-to-metal feed-throughs brazed in place. See G00167 for typical device specifications and other information.

Related material in collection: G00167
Summary comment by: Ed Allison; Jim Lineback.
G00168   NMAH Catalog Number 1987.0487.213.02
TI number: G00168
Transistors, silicon power - These items are examples of silicon power transistors in the TO-3 package. This package has been used in production at TI for a wide variety of silicon and germanium chips since the early 1960's.

These are flange mounted packages with the caps welded to the header. The header and cap are nickel plated copper sealed by a cold weld. The leads are glass-to-metal feed-throughs brazed in place. See G00167 for typical device specifications and other information.

Related material in collection: G00167
Summary comment by: Ed Allison; Jim Lineback.
G00161   NMAH Catalog Number 1987.0487.222.01
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162
Summary comment by: Ed Allison, Jim Lineback.
G00161   NMAH Catalog Number 1987.0487.222.02
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162
Summary comment by: Ed Allison, Jim Lineback.
G00161   NMAH Catalog Number 1987.0487.222.03
TI number: G00161
Transistors, silicon power - These items did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is 30W at 100 degrees C case; rated collector current is up to 10A continuous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized beryllium oxide wafer.

Related material in collection: G00162
Summary comment by: Ed Allison, Jim Lineback.
G00162   NMAH Catalog Number 1987.0487.223.01
TI number: G00162
Transistors, silicon power - These items are examples of silicon power transistors in the TO-59 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00161 for typical device specifications for the various silicon chips used.

Related material in collection: G00161.
Summary comment by: Ed Allison, Jim Lineback.
G00162   NMAH Catalog Number 1987.0487.223.02
TI number: G00162
Transistors, silicon power - These items are examples of silicon power transistors in the TO-59 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00161 for typical device specifications for the various silicon chips used.

Related material in collection: G00161.
Summary comment by: Ed Allison, Jim Lineback.
G00163   NMAH Catalog Number 1987.0487.224
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164.
Summary comment by: Ed Allison, Jim Lineback.
G00163   NMAH Catalog Number 1987.0487.224.01
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164.
Summary comment by: Ed Allison, Jim Lineback.
G00163   NMAH Catalog Number 1987.0487.224.02
TI number: G00163
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipaion is 67W at 100 degrees C case; rated collector current is up to 20A continous and breakdown voltage is 80-100V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00164.
Summary comment by: Ed Allison, Jim Lineback.
G00164   NMAH Catalog Number 1987.0487.225.01
TI number: G00164
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00163 for typical specifications for the various silicon chips used.

Related material in collection: G00163.
Summary comment by: Ed Allison, Jim Lineback.
G00164   NMAH Catalog Number 1987.0487.225.02
TI number: G00164
Transistors, silicon power - These items are examples of silicon power transistors in the TO-61 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps welded to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00163 for typical specifications for the various silicon chips used.

Related material in collection: G00163.
Summary comment by: Ed Allison, Jim Lineback.
G00165   NMAH Catalog Number 1987.0487.226.01
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166.
Summary comment by: Ed Allison, Jim Lineback.
G00165   NMAH Catalog Number 1987.0487.226.02
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166.
Summary comment by: Ed Allison, Jim Lineback.
G00165   NMAH Catalog Number 1987.0487.226.03
TI number: G00165
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

Two devices did not have the caps mounted, and one has had the cap cut off. Various silicon chips have been used in this package. Normally the rated power dissipation is over 100 degrees C case; rated collector current is up to 30A continuous and breakdown voltage is 100-120V. The header is copper with a brazed ring to which the cap is welded. When required, the chip is isolated from the header by a thin metallized berylium oxide wafer.

Related material in collection: G00166.
Summary comment by: Ed Allison, Jim Lineback.
G00166   NMAH Catalog Number 1987.0487.227.01
TI number: G00166
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps mounted to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00165 for typical device specifications for the various silicon chips used.

Related material in collection: G00165.
Summary comment by: Ed Allison, Jim Lineback.
G00166   NMAH Catalog Number 1987.0487.227.02
TI number: G00166
Transistors, silicon power - These items are examples of silicon power transistors in the TO-63 package. This package has been used in production at TI with a wide variety of silicon chips since the early 1960's.

These are stud mounted packages with the caps mounted to the header. The leads are tubular and glass sealed to the cap. The header is copper with a brazed ring to which the kovar cap is welded. See G00165 for typical device specifications for the various silicon chips used.

Related material in collection: G00165.
Summary comment by: Ed Allison, Jim Lineback.
G00124   NMAH Catalog Number 1987.0487.228
TI number: G00124
Transistor, Silicon Grown Junction - This device, built April 14, 1954, was the first silicon transistor built by TI which exhibited useful transistor action. This development led to the announcement by TI of the first commercially available silicon transistor in May, 1954.

This item was part of the original S/B Lobby display and the 50th Anniversary exhibit. During a conversation with Jim Lacy, Mort Jones provided the following background information. This transistor was fabricated on April 14, 1954. Jones thinks it was first saved by Ed Jackson. It was put in a display and presented by Pat Haggerty to Jones of his tenth anniversary as a TI'er in August, 1963. This silicon grown junction transistor was the result of a program started in 1953 under Gordon Teal. On the development team were Willis Adcock, Ed Jackson, Mort Jones and Jay Thornhill. On May 10, 1954, a lengthy roster of speakers at the IRE National Conference on Airborne Electronics in Dayton, Ohio, predicted that silicon might be the answer in four or five years to the heat problem then limiting the use of germanium transistors. Gordon Teal, the final speaker on the program, reviewed the work done at TI and closed with the announcement that TI had silicon transistors for immediate delivery. To demonstrate their capability, he played a phonograph using TI transistors operating in oil at 150 degrees C. This startling disclosure echoed throughout the industry, and TI was on its way to becoming the leading semiconductor manufacturer. QRA checked this unit on 5/3/85. It had an open base lead. Collector to emitter breakdown (100 uA) was 4.5V. See Artifact Historical File for X-ray photos, a copy of Jones' notebook pages and talks by Adcock and Teal at the 25th anniversary observance.

Related material in collection: G00006,7.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00125   NMAH Catalog Number 1987.0487.229.01
TI number: G00125
Transistor, Silicon Grown Junction - This item is an example of the original TI silicon grown junction which was introduced in May, 1954.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 126.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00125   NMAH Catalog Number 1987.0487.229.02
TI number: G00125
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction which was introduced in May, 1954.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 126.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00126   NMAH Catalog Number 1987.0487.230.01
TI number: G00126
Transistor, Silicon Grown Junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00126   NMAH Catalog Number 1987.0487.230.02
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00126   NMAH Catalog Number 1987.0487.230.03
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00126   NMAH Catalog Number 1987.0487.230.04
TI number: G00126
Transistor, silicon grown junction - This item is an example of the original TI silicon grown junction transistor series which was introduced in May, 1954.

Item was part of the original S/B display and the 50th Anniversary exhibit.

Related material in collection: G00006, 7, 124 and 125.
Summary comment by: Willis Adcock, Mort Jones, Jim Lacy.
G00127   NMAH Catalog Number 1987.0487.231
TI number: G00127
Transistor, Silicon Grown Junction - Type X-15 was a May 1954, engineering experimental device designed to increase the rate dissipation of the silicon grown junction transistor from .150 W to .750 W.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. The original x-15 was filled with DC200 silicone oil and mounted in a heat sink strap which could be screw mounted. The oil was changed to a Dow Corning alumina impregnated silastic for production. The silastic required a heat cure prior to soldering the can in place. The device was introduced as the TI951 series in the latter part of 1954.

Related material in collection: G00128, 336.
Summary comment by: Norman Ince, Jim Lacy.
G00128   NMAH Catalog Number 1987.0487.232.01
TI number: G00128
Transistor, silicon grown junction - The TI951-3 were the first medium power silicon grown junction transistors and were introduced in late 1954. The heat sink shown was supplied with each transistor. The dissipation rating was .750W at 25 degrees C.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. This series was constructed the same as the TI 901 series but was filled with a Dow Corning alumina filled silastic which required a heat curve prior to sealing.

Related material in collection: G00127, 336.
Summary comment by: Norman Ince, Jim Lacy.
G00128   NMAH Catalog Number 1987.0487.232.02
TI number: G00128
Transistor, silicon grown junction - The TI951-3 were the first medium power silicon grown junction transistors and were introduced in late 1954. The heat sink shown was supplied with each transistor. The dissipation rating was .750W at 25 degrees C.

Item was part of the original S/B Lobby display and was used in the 50th Anniversary exhibit. This series was constructed the same as the TI 901 series but was filled with a Dow Corning alumina filled silastic which required a heat curve prior to sealing.

Related material in collection: G00127, 336.
Summary comment by: Norman Ince, Jim Lacy.
G00154   NMAH Catalog Number 1987.0487.234.01
TI number: G00154
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00056 for additional information.

Related material in collection: G00056-7, G00155, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00154   NMAH Catalog Number 1987.0487.234.02
TI number: G00154
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00056 for additional information.

Related material in collection: G00056-7, G00155, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00154   NMAH Catalog Number 1987.0487.234.03
TI number: G00154
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00056 for additional information.

Related material in collection: G00056-7, G00155, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00155   NMAH Catalog Number 1987.0487.235.01
TI number: G00155
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00057 for additional information.

Related material in collection: G00056-7, 154, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00155   NMAH Catalog Number 1987.0487.235.02
TI number: G00155
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00057 for additional information.

Related material in collection: G00056-7, 154, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00155   NMAH Catalog Number 1987.0487.235.03
TI number: G00155
Vacuum Tube Replacement - These devices were designed as semiconductor replacements for 6AK5 vacuum tubes in the 1972-3 time period. The customer was Western Electric.

See G00057 for additional information.

Related material in collection: G00056-7, 154, PG00030-31.
Summary comment by: Win Day, John Gibson, Don Hyde.
G00226   NMAH Catalog Number 1987.0487.249.01
TI number: G00226
Photo Available Triac, Motor Controller - This item is an example of an experimental TI triac designed about 1972 in the Semiconductor Group for Control Products. It was itended for use in a motor controller to switch power on and off.

Cost and maximum voltage goals could not be met; therefore, the device was not put into production. However, the semiconductor process developments were useful for new device designs. A good distribution of 1300V and 45A units was attained compared to the requirement for 1500V. The active area was defined by a deep moat etch, and the chip was glass passivated on both sides.

Summary comment by: Louis Coleman, Ralph Dosher.
G00226   NMAH Catalog Number 1987.0487.249.02
TI number: G00226
Photo Available Triac, Motor Controller - This item is an example of an experimental TI triac designed about 1972 in the Semiconductor Group for Control Products. It was itended for use in a motor controller to switch power on and off.

Cost and maximum voltage goals could not be met; therefore, the device was not put into production. However, the semiconductor process developments were useful for new device designs. A good distribution of 1300V and 45A units was attained compared to the requirement for 1500V. The active area was defined by a deep moat etch, and the chip was glass passivated on both sides.

Summary comment by: Louis Coleman, Ralph Dosher.
G00107   NMAH Catalog Number 1987.0487.265
TI number: G00107
Photo Available Receiver, Transistorized - The item is one of the first engineering prototypes built in 1954. The Plexiglass case was representative of the final case for which tooling was in concurrent design and fabrication.

The item was part of the original S/B Lobby display and the 50th Anniversary exhibit. The radio was a joint TI/IDEA(Regency) effort, with TI being responsible for the device and circuit design. TI originated the idea for such a radio and recruited Regency's participation for their production and marketing capabilities. For additional information see "The secret six-month project" IEEE SPECTRUM, December, 1985, and TR-1 Technical Data and Service Notes. Copies are in the Artifact Historical File.

Related material in collection: Z00108, Z00109.
Summary comment by: Boyd Cornelison, Paul Davis, S. T. Harris, Jim Nygaard, Roger Webster.
Z00108   NMAH Catalog Number 1987.0487.266
TI number: Z00108
Photo Available Receiver, Transistorized - This radio, S/N 14528, is an early production model. The initial production radio had S/N 1001. (See Z00409.) Some of the early radios were put in clear cases for demonstration purposes.

The item was part of the original S/B Lobby display and the 50th Anniversary exhibit. See Related Material for additional information.

Related material in collection: G00107, Z00109, 409, 411.
Summary comment by: Boyd Cornelison, Paul Davis, S. T. Harris, Jim Nygaard, Roger Webster.
G00106   NMAH Catalog Number 1987.0487.267
TI number: G00106
Photo Available Receiver, Transistorized - The radio is a 1957 redesigned version of one of the first transistorized table radios. It was built to demonstrate to radio manufacturers. It also used TI built transformers.

This item was part of the original S/B Lobby display.

Summary comment by: Roger Webster.
G00257   NMAH Catalog Number 1987.0487.270
TI number: G00257
Transistor, Silicon Planar - This transistor is a TI production example of the 2N698 family of versatile silicon planar transistors designed for amplifier, switching and oscillator applications.

From the date code and the other items in the collection with which this was received, the device was made in early 1974. The original family types were introduced in 1963, and the series continued in production into the early 1980's.

Summary comment by: Hoyt Cowling, Obie Draper.
G00259   NMAH Catalog Number 1987.0487.272
TI number: G00259
Transistor, Silicon Industrial Power - This transistor is an example of a line of silicon power transistors designed and built for industrial applications. The "A" in front of the date code indicates Dallas production.

G00260   NMAH Catalog Number 1987.0487.273
TI number: G00260
Transistor, Silicon Power - This silicon power transistor is in a steel TO-3 package of the type used in industrial and automotive applications. The "A" in front of the date code indicates Dallas production.

Summary comment by: Wade Feemster, Dave Jasper.
Z00139   NMAH Catalog Number 1987.0487.277
TI number: Z00139
Receiver, transistorized - This radio was introduced in mid 1958 @ $29.95. It represented the first major sale of a TI reflex 4 germanium transistor kit.

The advantage of the reflex transistor kit was that it permitted the production of a small portable radio with longer battery life. For a TI news item on this radio and kit, see the Artifact Historical File.

Summary comment by: Jim Naygaard, Hank Stewart and Roger Webster.
G00101   NMAH Catalog Number 1987.0487.280
TI number: G00101
Transistor, Silicon Power - The item is one of the first silicon power transistors for MERA. It had a 2 W output at 2.25 GHz and a gain exceeding 3dB. It was built in 1965-6.

This item was part of the original S/B Lobby display. One of these transistors was in each of the MERA modules in chip form. The coaxial package with this chip was used for device testing and evaluation only. For additional information, see "Monolithic Microwave Integrated Circuits: an Historical Perspective", IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, Vol. MTT-32, No. 9, September, 1984, in the Artifact Historical Files.

Related material in collection: G00100, 102, 180, 310, 311.
Summary comment by: Tom Hyltin, Brad LaGrange, Frank Opp, Roger Webster.
G00331   NMAH Catalog Number 1987.0487.309.01
TI number: G00331
Transistor, Germanium Epitaxial Planar - This transistor type is a PNP germanium epitaxial planar device designed for microwave applications. It was one of the first, if not the first, transistor of this type built for microwave use.

This transistor was developed at TI in early 1965. The experimental type number TIXM101 was assigned in January, 1965. The production devices were designated TIM101 until the specifications were registered with JEDEC, which assigned it type number 2N5043. These two devices have the 611A date code which shows them to be from the first lot of the eleventh week of 1966.

Summary comment by: Kemper B. (Bernie) Landress.
G00331   NMAH Catalog Number 1987.0487.309.02
TI number: G00331
Transistor, Germanium Epitaxial Planar - This transistor type is a PNP germanium epitaxial planar device designed for microwave applications. It was one of the first, if not the first, transistor of this type built for microwave use.

This transistor was developed at TI in early 1965. The experimental type number TIXM101 was assigned in January, 1965. The production devices were designated TIM101 until the specifications were registered with JEDEC, which assigned it type number 2N5043. These two devices have the 611A date code which shows them to be from the first lot of the eleventh week of 1966.

Summary comment by: Kemper B. (Bernie) Landress.
G00389   NMAH Catalog Number 1987.0487.318
TI number: G00389
Transistor Packages Display - This display in plastic show some of the very early transistor packages used or considered for use by TI. From memory and the packages shown, this display was probably made in the latter part of 1953.

No. 1 is the package used for the first TI produced transistor. This was the package used by Bell Labs/Western Electric at the time of the licensing agreement. Nos. 2 - 4 are packages for the first TI designed transistors, germanium point contacts. Nos. 5 - 7 are packages of the designs being used in Engineering at the time for evaluation. At that time, the industry was in the process of developing a standard small signal transistor package. The package finally selected by TI was dimensionally very close to No. 7. The header had a kovar rim and leads sealed in glass. After fabrication of the transistor, the header was solder sealed to a metal can. The 1-53 on the front of No. 2 and the back of No. 3 indicate they were made in January, 1953.

Related material in collection: See G00001-3, 42-44 for examples of production devices of the period.
Summary comment by: Boyd Cornelison, Steve Karnavas, Jim Lacy, Mark Shepherd.
G00314   NMAH Catalog Number 1987.0487.323
TI number: G00314
Transmitter, Transistorized Radio - This transmitter was designed and built in late 1953 in the engineering model shop using TI germanium grown junction transistors. It was the first such product done at TI. It was built for and used in the ceremonies opening the enlarged Lemmon Avenue Plant on November 18, 1953.

The transmitter, built under the guidance of Don Retzlaff with Al Fox a member of the team, produced a voice actuated signal. The unit, less the battery, was in a small case with a strap to resemble a wrist watch. The antenna was wrapped around the case, and the battery was carried separately by the wearer and wired to the case. A conventional receiver several feet away picked up the signal and actuated a spark which cut the ribbon for the official opening. The batter with the transmitter is the original one. The case and antenna are lost. See Photographs PZ00086 & 7 for the event in which the transmitter was used. The November, 1953, issue of "texins" contains a brief account of the opening.

Related material in collection: PZ00085, 6.
Summary comment by: Al Fox, S. T. Harris.
G00089   NMAH Catalog Number 1987.0487.325
TI number: G00089
Transistor, Germanium Coaxial - This item is an example of the first caoxial microwave transistor and, possibly, the first germanium microwave transistor, developed in 1962. The type number was TIX3000.

This item was part of the original S/B Lobby Display. The device was developed for Naval Ordnance, China Lake. It produced six decibel gain at 3gHz. Although a high noise factor prevented production, the device pointed the way for further developments leading to the all silicon MERA program.

Summary comment by: Roger Webster.
Z00304   NMAH Catalog Number 1987.0487.327
TI number: Z00304
Receiver, Transistorized - This radio is an example of the mass produced low priced pocket radios resulting from the introduction of the TI designed Regency radio introduced in late 1954.

This radio was assembled in Hong Kong, probably in late 1962. It has six TI germanium transistors with date codes of 239, indicating manufacture in the 39th week of 1962.

G00020   NMAH Catalog Number 1987.0487.330
TI number: G00020
Photo Available Transistor Fabrication Display - Display of the process steps in the fabrication of the 2N339 series of medium power grown junction silicon transistors. This series was introduced by TI in 1956.

Items in display: 1)Silicon,high purity material 2)Silicon single crystal seed 3)Silicon grown junction crystal 4)Silicon,half crystal 5)Silicon crystal with Cavitron cut 6)Silicon transistor bar 7)Transistor bar with fused wire 8)Transistor bar with lead dipped ends 9) Transistor bar soldered onto header 10)Transistor canned.

Related material in collection: G00010, 11.
Summary comment by: Jim Lacy, Howard Moss, Harry Owens, Chuck Swenson.
G00050   NMAH Catalog Number 1987.0487.341
TI number: G00050
Transistor, Silicon Diffused Mesa Power - Example of the first diffused mesa silicon transistor produced by TI. Introduced in early 1957.

Item was part of the original S/B Lobby display. This was the best silicon power transistor available for some time and was designed into much military equipment. Collector current rating was 2A. The initial price was $86 in 1-99 quantities. A JAN specification was issued in 1962, and TI immediately became a qualified supplier. Because of its wide use in military equipment, even prior to the JAN specification, it remained in production until(UNKNOWN DATE), even after an improved planar transistor was available. Because of different processes full interchangeability could not be maintained. See display description for additional information.

Related material in collection: G00051.
Summary comment by: Boyd Cornelison, Howard Moss, Elmer Wolff.
G00051   NMAH Catalog Number 1987.0487.342
TI number: G00051
Transistor, Silicon Diffused Mesa Power - Example of first silicon diffused mesa transistor produced at TI.

Item was part of original S/B Lobby display. See G00050 for additional information.

Related material in collection: G00050
Summary comment by: Boyd Cornelison, Howard Moss, Elmer Wolff.
G00014   NMAH Catalog Number 1987.0487.346
TI number: G00014
Transistor, Ladder Assembly Display - Represents early 1954 effort to improve production methods by group fabrication.

Multiple germanium bars were fused to platinum strips with a Au-Ge die and platinum wire fused to bar junction with indium dot in single furnace operation. Bar units were cut apart and mounted on the header by welding. This process provided improved productivity at the time and was used at TI from 1954 to 1956 for some production.

Related material in collection: G00004.
Summary comment by: Jim Lineback, Elmer Wolff.
G00049   NMAH Catalog Number 1987.0487.351<