United States Patent 3,456,616
July 22, 1969

Vapor Deposition Apparatus Including Orbital Substrate Support
Paul S. Gleim
Jimmie B. Sherer

Filed December 6, 1965
Image of US PATENT 3,456,616

Abstract of the Disclosure

The invention describes an integrated circuit combining semiconductor circuit elements having active regions of the same or opposite type conductivity separated by a semiconductive region over which extends an interconnection on an insulating layer, wherein a highly doped surface region is provided underneath the interconnection to reduce unwanted field-induced leakage currents. In a preferred, the circuit elements are complementary IGFETs. In another embodiment, one of the IGFETs is built into an island surrounded by a thin heavily doped liner
Figure descriptions: cover graphic

  • Figure 1 is a Figure 1 is a cross-sectional view taken along the line I-I of Figure 2.
  • Figure 2 is a plan view.
  • Figures 1 and 2 show a completed device comprising a p-type body (1), epitaxially deposited n-type material (2), the extent of which is shown in Figure 2 by the chain-dot line (3), an n+ diffused layer (4), p-type diffused regions (5), n-type diffused regions (6) and an oxide layer (7).

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National Museum of American History
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