Abstract of the Disclosure

Disclosed is a method of manufacturing a semiconductor sandwich structure having discrete semiconductor islands therein. A wafer is selectively etched to provide individual cavities therein, and thereafter a glass containing mixture is applied to the etched surface of the wafer and fusion bonded at elevated temperatures between a supporting dummy substrate and the wafer. The supporting substrate and the wafer are both monocrystalline silicon, so that when the sandwich structure is heated to elevated temperatures, no bowing of the wafer takes place. Finally, the unetched surface of the wafer is removed to a depth sufficient to expose portions of the glass and thereby provide monocrystalline semiconductor islands which are each surrounded by an insulating layer of glass

• Figure 1 is an enlarged cross-sectional view of an integrated circuit structure having isolating insulation, which structure constitutes one embodiment of the invention.
• Figure 2 is a series of cross-sectional views illustrating an integrated circuit structure of the invention at different stages of its manufacture in accordance with the method of the invention, and
• Figure 3 is a series of cross-sectional views illustrating an integrated circuit structure of the invention at different stages in the in situ formation of the glass isolating the discrete semiconductor islands.

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3,343,255  06/1965  Donovan
3,381,182  10/1964  Thorton
3,390,022  06/1965  Fa
3,332,137  07/1967  Kenney