Abstract of the Disclosure

A process for passivating a semiconductor device having one surface partially covered with an oxide layer by forming a first passivating dopant material of one conductivity type covering the semiconductor body and the oxide layer, forming a second oxide layer covering the first passivating dopant material and forming a second passivating dopant material of the opposite conductivity type covering the second oxide layer

• Figure 1 through 7 are schematic sectional views on an exaggerated scale of a transistor structure in various stages of fabrication according to the processes of this invention.
• Figure 8 is a schematic plan view on an exaggerated scale of the transistor structure shown in Figures 1 through 7.
• Figure 9 is a schematic sectional view of another transistor structure made according to the methods of this invention in an intermediate stage of fabrication, also at a greatly exaggerated scale.
• Figure 10 is a schematic sectional view of the finished transistor structure of Figure 9.

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3,206,827  09/1965  Kriegsman
3,226,611  12/1965  Haenichen
3,275,910  09/1966  Phillips
3,350,222  10/1967  Ames