United States Patent 3,457,632
July 29, 1969

Process For Implanting Buried Layers In Semiconductor Devices
Russell P. Dolan Jr.
Sven A. Roosild

Filed October 7, 1966
Image of US PATENT 3,457,632

Abstract of the Disclosure

A method of forming semiconductor electronic devices by ionic bombardment including the steps of placing an ion absorbing mask of semiconductor substrate; bombarding the substrate with monoenergetic ions and heating the material to repair radiation damage
Figure descriptions: cover graphic

  • Figure 1 is a side elevational view, partly in section of the apparatus utilized in this invention.
  • Figure 2 is a cross-sectional view of a semiconductor device produced by this invention.

 Citations [54]:
2,735,948 02/1956 Sziklai 2,787,564 04/1957 Shockley 2,750,541 06/1956 Ohl 3,293,084 12/1966 McCaldin
National Museum of American History
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