United States Patent 3,459,152
August 5, 1969

Apparatus For Epitaxially Producing A Layer On A Substrate
Lilburn H. Garrison
William E. Winter

Filed August 28, 1964
Image of US PATENT 3,459,152

Abstract of the Disclosure

Apparatus for growing epitaxial layers of semiconductor material on a single crystal substrate includes a means for connecting each substrate into a separate electrical circuit. Each circuit includes a means for monitoring the current flowing in the circuit. The power supplied to the electrical circuit is constantly adjusted automatically in response to the current sensing means thereby preventing the substrate and its epitaxial growth from exceeding a predetermined maximum temperature and keeping the substrate within a predetermined temperature range.
Figure descriptions: cover graphic

  • Figure 1 is a vertical cross section through the apparatus provided by this invention.

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National Museum of American History
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