PATENT COVER GRAPHIC

United States Patent 3,461,004
August 12, 1969

Method Of Epitaxially Growing Layers Of Semi Conducting Compounds
Horst P. Lochner
Bayreuth Dersin
Hans Jurgen Dersin

Filed August 3, 1966
Image of US PATENT 3,461,004

Abstract of the Disclosure

Our invention relates to a method of producting epitaxially grown layers of semiconducting compounds, particularly AIIIBV compounds, of stoichiometric composition by means of a chemical transport reaction. In a more particular aspect, the invention relates to the production of compounds whose respective components have considerably different vapor pressures.
Figure descriptions: cover graphic

  • Figure 1 illustrates schematically and partly in section an embodiment of apparatus for performing the method.
  • Figure 2 shows schematically and also partly in section, another embodiment of such apparatus. 

 Citations [54]:
  
3,142,596  07/1967  Theuerer
3,397,094  08/1968  Webb
3,197,411  07/1965  Frosch
3,291,657  12/1966  Sirtl
3,322,501  05/1967  Woodall
National Museum of American History
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