United States Patent 3,461,004
August 12, 1969

Method Of Epitaxially Growing Layers Of Semi Conducting Compounds
Horst P. Lochner
Bayreuth Dersin
Hans Jurgen Dersin

Filed August 3, 1966
Image of US PATENT 3,461,004

Abstract of the Disclosure

Our invention relates to a method of producting epitaxially grown layers of semiconducting compounds, particularly AIIIBV compounds, of stoichiometric composition by means of a chemical transport reaction. In a more particular aspect, the invention relates to the production of compounds whose respective components have considerably different vapor pressures.
Figure descriptions: cover graphic

  • Figure 1 illustrates schematically and partly in section an embodiment of apparatus for performing the method.
  • Figure 2 shows schematically and also partly in section, another embodiment of such apparatus.

 Citations [54]:
3,142,596 07/1967 Theuerer 3,397,094 08/1968 Webb 3,197,411 07/1965 Frosch 3,291,657 12/1966 Sirtl 3,322,501 05/1967 Woodall
National Museum of American History
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