Abstract of the Disclosure

A method of making a complementary pair of MOS transistors in a single semiconductor substrate body of one conductivity type silicon by first, forming a region of opposite conductivity type in the body, fabricating transistors having opposite type source and drain regions in the regions of different conductivity types each of these transistors having silicon dioxide gate electrode insulator layers, and, after formation of the silicon dioxide layers, cooling the unit to room temperature in pure, dry oxygen. An inversion layer is formed in the MOS transistor by bombarding the gate insulating layer with an ionic discharge, creating acceptor sites in the insulator.

• a perspective view of a part of an integrated circuit, including two complementary MOS transistors in accordance to the present invention

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