Abstract of the Disclosure

Method for making a pair of closely spaced semiconductors comprising the steps of depositing successive layers of conductor, filler material, and conductor on a substrate; selectively etching away the filler material and eliminating any exposed pinhole shorts. The method is particularly useful in the fabrication of thin film capacitors and crossovers because of the relative ease with which pinhole shorts can be eliminated.

• Figure 1 is a schematic cross section of a typical structure used to make a capacitor in accordance with the invention.
• Figure 2 is a cross section of a completed capacitor made in accordance with the invention.
• Figure 3 is a schematic cross section of a typical structure used to make a thin film crossover in accordance with the inverntion.
• Figure 4 is a cross section of the complete crossover.

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