Abstract of the Disclosure

Described is apparatus for the simultaneous precipitation of crystalline semiconductor layers upon a plurality of disc-like crystalline substrates which are arranged in a reaction vessel on the surface of an elongated and heatable carrier which extends in a horizontal direction. A gas inlet tube with a row of openings at its lower side and rotatable about its horizontal axis is provided above the carrier and parallel to it. A gas outlet tube similar to the gas inlet tube and also provided with a row of openings, is situated below the carrier and also extends parallel to the carrier. Also described is the method of using the above apparatus.

• Figure 1 is a sectional view of part of an apparatus for performing the method of the invention.
• Figure 2 is a cross section of the apparatus.
• Figure 3 shows a lateral elevation.
• Figure 4 is a view seen from the right of Figure 3 and also shows schematically a reciprocating drive for one of the gas-inlet nozzle tubes of the apparatus.

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