United States Patent 3,462,321
August 19, 1969

Process Of Epitaxial Growth Of Silicon Carbide
Paul L. Vitkus

Filed October 25, 1966
Image of US PATENT 3,462,321

Abstract of the Disclosure

Method of growing a silicon carbide epitaxial layer on a silicon carbide seed which comprises; providing in a temperature gradient a silicon carbide seed and a source of carbon separated by a layer of molton silicon. Carbon from the carbon source, which is at the higher temperature, is dissolved in the silicon, and epitaxial deposition of silicon carbide takes place on the cooler surface of the seed. An impurity such as buron or aluminum may be included in the silicon layer to provide a doped epitaxial layer
Figure descriptions: cover graphic

  • Figure 1 is a diagrammatic , schematic representation of one embodiment of the invention.

 Citations [54]:
2,937,324 05/1960 Kroko 3,205,101 09/1965 Mlavsky 3,301,716 01/1967 Kleinknecht 3,411,946 01/1968 Tramposch
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