United States Patent 3,462,657
August 19, 1969

Protection Means for Surface Semiconductor Devices having Thin Oxide Films Therein
Dale M. Brown

Filed March 7, 1968
Image of US PATENT 3,462,657

Abstract of the Disclosure

Protection against failure of an insulating oxide film on a semiconductor body such as the gate oxide in a silicon field effect transistor, wherein a voltage supplied between an electrical conductor overlying the oxide film and a semiconductor body which it covers, is provided by placing a discrete quantity of silicon nitride in electric parallel with the insulating oxide. Silicon nitride has a much higher leakage current before breakdown than insulating oxides as, for example, silicon dioxide.
Figure descriptions: cover graphic

  • Figure 1 is a schematic vertical cross-sectional view of a field effect transistor constructed in accord with the present invention and including oxide protective means therefor.
  • Figure 2 is a graph illustrating the current leakage versus applied field for silicon dioxide and silicon nitride films of equivalent thickness.

 Citations [54]:
3,259,759 07/1966 Giaever 3,271,201 09/1966 Pomerantz 3,373,051 03/1968 Chu 3,379,584 04/1968 Bean
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