Abstract of the Disclosure

A field effect transistor having a dielectric layer with two portions, the first portion under the gate overlying the channel region and having a surface charge density of less than about 5x10^-11 charges per square centimeter, and a second portion over the remainder of the surface having a higher surface charge density in excess of about 1x10^-12 charges per square centimeter.

• Figure 1 is a greatly enlarged plain view of a MOS transistor according to the invention.
• Figure 2 is a sectional view of the transistor structure according to the invention taken along line 2-2 of Figure 1.

 Citations [54]:
  
3,336,661  08/1967  Polansky
3,233,123  02/1966  Heiman
3,339,128  08/1967  Olmstead
3,246,173  04/1966  Silver