United States Patent 3,464,868
September 2, 1969

Method Of Enhancing Transistor Switching Characteristics
Roger Edwards
Paul Perron Jr.

Filed January 13, 1967
Image of US PATENT 3,464,868

Abstract of the Disclosure

Silicon transistors containing both conductivity type zones produced by diffusion, and diffused gold to control minority carrier lifetime, are subjected to a very brief, high temperature, terminal heat treatment. Typically this heat treatment is at a temperature of from 1000 to 1100 degrees centigrade for a period of up to about 30 seconds. This treatment distributes previously introduced gold to more effective locations within the device without deleteriously affecting diffused PS junctions. Subsequent processing involves only lower temperatures, less than about 600 degrees centigrade.
Figure descriptions: cover graphic

  • a flow chart of the steps in a typical transistor fabrication process including this invention.

 Citations [54]:
2,964,689 12/1960 Buschert 3,067,485 12/1962 Ciccolella 3,184,347 05/1965 Hoerni
National Museum of American History
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