United States Patent 3,468,728
September 23, 1969

Method For Forming Ohmic Contact For A Semiconductor Device
Robert Clurin Martin

Filed January 14, 1965
Image of US PATENT 3,468,728

Abstract of the Disclosure

Disclosed is a method for forming an ohmic contact to a small geometry region in a semiconductor integrated circuit by using an insulating layer of different thicknesses. The insulating layer is formed on the integrated circuit with the portion of the insulating layer over the region being thinner than the rest of the insulating layer. During the formation of an opening in the insulating layer the unmasked thinner insulating layer is completely removed while the unmasked thicker insulating layer is only partially removed. A metal contact is then formed on the exposed portion of the region.
Figure descriptions: cover graphic

  • Figure 1 is a schematic diagram of an electronic circuit.
  • Figure 2 is a plan view, depicting the layout of all circuit elements, of the circuit of Figure 1 integrated in a semiconductor wafer.

 Citations [54]:
3,300,339 01/1967 Perri 3,258,606 06/1966 Meadows 2,995,473 08/1961 Levi
National Museum of American History
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