Abstract of the Disclosure

High efficiency gallium phosphide electroluminescent p-n junction devices capable of emitting visible light at room temperature are prepared by depositing an epitaxial layer of n-type gallium phosphide by conventional techniques upon a solution grown p-type gallium phosphide crystal and annealing the resultant junction at temperatures ranging from 450-725° C.

• Figure 1A is a p-type solution grown gallium phosphide crystal.
• Figure 1B shows an n-type gallium phosphide layer grown over the crystal of Figure 1A.
• Figure 1C is a cross-sectional view of the structure of Figure 1B mounted upon a suitable header.

 Citations [54]:
  
3,100,166  08/1963  Marinace
3,278,342  10/1966  John
3,411,946  11/1968  Tramposch