United States Patent 3,470,039
September 30, 1969

Continous Junction Growth
Paul C. Goundry
James C. Boatman

Filed December 21, 1966
Image of US PATENT 3,470,039

Abstract of the Disclosure

This invention relates to semiconductor material preparation and more particularly to a method of continuously joining semiconductor materials of different conductivities to produce continuous junction growth at the interface of different materials.
Figure descriptions: cover graphic

  • Figure 1 is a diagrammatic representation partially in cross section of apparatus suitable for direct growth from a melt of monocrystalline semiconductor material containing a continuous P-N junction.
  • Figure 2 depicts a suitable guide for shaping the molten semiconductor material.

 Citations [54]:
2,743,200 04/1956 Hannay 3,124,489 03/1964 Vogez 3,198,671 08/1965 Dikhoff 3,261,722 07/1966 Kozler
National Museum of American History
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