Abstract of the Disclosure

An integrated circuit containing an insulating base having depressions therein with semiconductor pellets being received within the depressions and bonded therein by means of an epitaxial growth layer.

• Figure 1 is a fragmentary plan view of a substrate used in accordance with the present invention.
• Figure 2 is a cross-sectional view taken substantially along the line II-II of Figure 1.
• Figure 3 is an enlarged plan view of the substrate after the semiconductor pellets have been deposited therein.
• Figure 4 is a cross-sectional view taken substantially along the line IV-IV of figure 3.
• Figure 5 is an enlarged plan view of the assembly after the epitaxial layer has been deposited thereon.
• Figure 6 is a cross-sectional view taken substantially along the line VI-VI of Figure 5.
• Figure 7 is an enlarged plan view of the assembly after the excess epitaxial layer has been removed therefrom.
• Figure 8 is a cross-sectional view taken substantially along the line VIII-VIII of Figure 7.

 Citations [54]:
  
2,817,048  12/1957  Thuermel
3,128,332  04/1964  Burkig
3,133,336  05/1964  Marinace
3,169,892  02/1965  Lemelson
3,377,513  04/1968  Ashby