Abstract of the Disclosure

A resistor element is formed by (1) providing an oxide film on the surface of a silicon, germanium, ceramic, glass or quartz substrate, (2) depositing a layer of aluminum, chromium or magnesium on the oxide film, and (3) heat treating the article to cause the metal to react with the oxide to form the resistor element.

• Figure 1 is a Figure 1 is a cross sectional view of a resistor element utilizing a P-N junction which has been conventionally used.
• Figures 2 through 6 are cross sectional views of a resistor element made according to the present invention which illustrate various steps in the manufacturing method thereof.
• Figures 7A through 7F show several modifications of the resistor element according to the present invention.
• Figures 8 through 10 are cross sectional views of still other embodiments of the invention.
• Figure 11A shows a cross sectional view of yet another embodiment of the invention, applied to a diffused type transistor.
• Figure 11B shows the equivalent circuit of the embodiment of Figure 11A.

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2,808,351  10/1957  Colbert
3,203,830  08/1965  Ostrander