United States Patent 3,472,689
October 14, 1969

Vapor Deposition Of Silicon-Nitrogen Insulating Coatings
Joseph H. Scott

Filed January 19, 1967
Image of US PATENT 3,472,689

Abstract of the Disclosure

A fast-etching coating consisting essentially of silicon and nitrogen is vapor deposited on a substrate, then converted to a slow-etching form.
Figure descriptions: cover graphic

  • Figure 1 is a schematic sectional view of a first form of apparatus useful in the practice of the invention.
  • Figure 2 is a schematic sectional veiw of a second form of apparatus useful in the parctice of the invention.

 Citations [54]:
3,170,273 02/1965 Walsh 1,190,308 10/1959 France 3,200,015 08/1965 Kuntz 3,226,194 12/1965 Kuntz 3,328,214 06/1967 Hugle
National Museum of American History
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