Abstract of the Disclosure

Method of making an insulated-gate field-effect transistor wherein the gate is first formed on an insulated portion of a semiconductor body and used as a mask to form the source and drain regions by the ion implantation of conductivity-type-determining impurities on either side of the gate.

• Figures 1(a) though 1(d) are cross-sectional elevational views of portions of an insulated-gate field-effect device in various stages of fabrication thereof according to the invention.
• Figure 2 is a perspective view, partly in section, of an insulated-gate field-effect device fabricated according to the invention.

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