United States Patent 3,472,712
October 14, 1969

Field-Effect Device With Insulated Gate
Robert W. Bower

Filed October 27, 1966
Image of US PATENT 3,472,712

Abstract of the Disclosure

Method of making an insulated-gate field-effect transistor wherein the gate is first formed on an insulated portion of a semiconductor body and used as a mask to form the source and drain regions by the ion implantation of conductivity-type-determining impurities on either side of the gate.
Figure descriptions: cover graphic

  • Figures 1(a) though 1(d) are cross-sectional elevational views of portions of an insulated-gate field-effect device in various stages of fabrication thereof according to the invention.
  • Figure 2 is a perspective view, partly in section, of an insulated-gate field-effect device fabricated according to the invention.

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2,563,503 08/1951 Wallace 3,311,756 03/1967 Nagata 2,735,948 02/1956 Sziklai 2,787,564 04/1957 Shockley 2,981,877 04/1961 Noyce 2,989,385 06/1961 Gianola
National Museum of American History
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