United States Patent 3,473,977
October 21, 1969

Semiconductor Fabrication Technique Permitting Examination Of Epitaxially Grown Layers
Glenn W. Skouson

Filed February 2, 1967
Image of US PATENT 3,473,977

Abstract of the Disclosure

A method for permitting examination and monitoring of epitaxially grown layers of semiconductive material where adjacent layers of a completed structure are to be of the same conductivity type by interposing a layer of opposite conductivity type and subsequently converting it by diffusion; and an article of manufacture formed for that purpose.
Figure descriptions: cover graphic

  • Figures 1 through 6 are sectional views of a semiconductor structure at successive stages in the course of fabrication process of a double-epitaxial type of integrated circuit employing the technique of this invention.
  • Figure 7 is a partial, enlarged sectional view of the structure at a subsequent stage.

 Citations [54]:
3,099,579 07/1963 Spitzer 3,189,494 06/1965 Short
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