United States Patent 3,473,980
October 21, 1969

Significant Impurity Sources For Solid State Diffusion
William E. Beadle
Kenneth E. Benson

Filed October 11, 1966
Image of US PATENT 3,473,980

Abstract of the Disclosure

A highly controllable source material for producing shallow phosphorus diffused zones in silicon semiconductor bodies comprises a ternary solid solution of 58% germanium, 6% silicon and 36% phosphorus by weight.
Figure descriptions: cover graphic

  • an apparatus for practicing the method in accordance with this invention.

 Citations [54]:
2,868,678 01/1959 Shockley 3,279,954 Month/Year Cody 2,997,410 08/1961 Selikson 3,118,094 01/1964 Cornelison 3,154,446 10/1964 Jones
National Museum of American History
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