United States Patent 3,474,304
October 21, 1969

Monolithic Thin-Film Devices With Active And Resistive Regions
Cedric G. Currin
Andrew Herczog
Robert J. Settzo

Filed January 3, 1968
Image of US PATENT 3,474,304

Abstract of the Disclosure

An integrated circuit including a diode or non-linear circuit element and a resistor both formed by utilizing the same material, a mixture of tin oxide and antimony oxide. These two elements are formed in a single step by depositing on a semiconductor wafer a film of tin oxide and antimony oxide in such a manner that a portion of the film which is to form the diode contacts the semiconductor wafer, and the portion of the film which is to form the resistor is insulated from the semiconductor. To complete the diode an ohmic (metallic) contact is made to the semiconductor wafer near the area at which the film contacts the semiconductor.
Figure descriptions: cover graphic

  • Figure 1 is a plan view of one illustrative embodiment of the invention.
  • Figure 2 is a cross-sectional view taken along the sectional lines II-II of Figure 1.
  • Figure 3 is a cross sectional view of a discrete diode formed in accordance with this invention.

 Citations [54]:
3,367,795 02/1968 Stutzman
National Museum of American History
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