United States Patent 3,475,234
October 28, 1969

Method For Making MIS Structures
Robert E. Kerwin
Donald L. Klein
John C. Sarace

Filed March 27, 1967
Image of US PATENT 3,475,234

Abstract of the Disclosure

The invention is concerned with methods for making MIS structures and particularly, field-effect transistors. The problem of making large arrays of miniature MIS devices without critical alignment of masks between sequential etch and diffusion steps is treated. The process also makes use of multiple dielectric layers and a self-limiting etch technique based on the use of a differential etchant. The proper location of the gate electrode with respect to the source and drain junctions is insured by using a silicon gate electrode as the diffusion mask for defining the source and drain junctions.
Figure descriptions: cover graphic

  • Figure 1 is a perspective view partly in section showing an MIS structure which may be fabricated in accordance with this invention.

 Citations [54]:
3,355,637 11/1967 Johnson 3,402,081 09/1968 Lehman 3,427,514 02/1969 Olmstead
National Museum of American History
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