Abstract of the Disclosure

This disclosure is directed to a process for forming diffused regions within a body of semiconductor regions without employing oxide masks.

• Figure 1 is a side view, in section, of a wafer of semiconductor material suitable for use in accordance with the teachings of this invention.
• Figures 2 to 5 are side views, in section, of the wafer of Figure 1 being processed in accordance with the teachings of this invention.
• Figure 6 is a side view of a semiconductor device prepared in accordance with the teachings of this invention.

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