United States Patent 3,475,661
October 28, 1969

Semiconductor Device Including Polycrystalline Areas Among Monocrystalline Areas
Saburo Iwata
Akira Misawa

Filed February 6, 1967
Image of US PATENT 3,475,661

Abstract of the Disclosure

A semiconductor device having a plurality of electrical elements thereon which are electrically isolated by a PN junction, the device including a substrate of one conductivity type and an epitaxial layer of the other conductivity type thereover, the epitaxial layer including polycrystalline areas through which an impurity is diffused to provide the isolating PN junction.
Figure descriptions: figure page is missing from the collection.

  • Figure 1 is a view in perspective of a substrate which can be used according to the present invention.
  • Figure 2 is a greatly enlarged cross-sectional view of the semiconductor device after the polycrystalline areas and the singel crystal areas have been applied to the substrate.
  • Figure 3 is a view similar to Figure 2 but illustrating the components after diffusion of an impurity resulting in the formation of PN junctions.
  • Figure 4 is a view similar to Figure 3 but illustrating a modified form of diffusion process which can be employed.
  • Figure 5 is a greatly enlarged view of a modified form of a semiconductor device produced according to the present invention.

 Citations [54]:
3,189,973 06/1965 Edwards 3,375,418 03/1968 Garnache 3,335,038 09/1967 Doo 3,327,182 06/1967 Kisinko 3,370,980 02/1968 Anderson
National Museum of American History
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