United States Patent 3,475,664
October 28, 1969

Ambient Atmosphere Isolated Semiconductor Devices
Dale Byron DeVries

Filed September 2, 1965
Image of US PATENT 3,475,664

Abstract of the Disclosure

Disclosed are integrated circuit devices which use the ambient fabrication atmosphere as an isolation medium between elements of the circuit, such devices having improved mechanical structure, improved surface area for attaching lead wires, reduced collector area, and lower stray capacitance.
Figure descriptions: cover graphic

  • Figure 1 illustrates a sectional view of a semiconductor wafer having a vapor-etched and redeposited semiconductor region therein.
  • Figure 2 illustrates a sectional view of the wafer of Figure 1 having diffused base and emitter regions in the redeposited region.
  • Figure 3 illustrates a sectional view of the device of Figure 2 mounted upon an insulating substrate according to the invention and inverted.
  • Figure 4 illustrates a sectional view of the mounted device of Figure 3 having etched-out regions therein according to the invention.

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3,275,910 09/1966 Phillips 3,343,255 09/1957 Donovan 3,298,880 01/1967 Takeshi Takagi 3,362,858 01/1968 Knopp 3,320,485 05/1967 Buie 3,158,788 11/1964 Last 3,335,338 08/1967 Lepselter 3,246,162 04/1966 Te Ning Chin 3,341,755 09/1967 Husher 3,277,351 10/1966 Hiroe Osofune
National Museum of American History
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