Abstract of the Disclosure

A method of providing contiguous adjacent regions of monocrystalline semiconductor material of different conductivity characteristics on a monocrystalline insulator substrate, comprising growing a first epitaxial layer of semiconductor material onto said insulator substrate, said first layer having a given conductivity characteristic, and said semiconductor material having substantially the same atomic spacing in its crystal lattice as said substrate, removing certain portions of said first layer to expose corresponding portions of said insulator substrate, growing a second layer of monocrystalline semiconductor material onto the remaining portions of said first layer and onto the exposed portions of said insulator substrate, said second layer having a conductivity characteristic different from that of said first layer, and removing the top portion of said second layer to a depth sufficient to expose the remaining portions of said first layer.

• Figures 1(a)-1(d) are cut away persoective views of the imporved assembly illustrating various stages of its fabrication according to the improved method.

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