Abstract of the Disclosure

A semiconductor device having one or more shallow PN junctions covered with an adherent layer of silicon dioxide, is stabilized by a process involving the steps of depositing an additional layer of silicon dioxide containing a preselected impurity, preferably phosphorus, on the adherent initial layer of silicon dioxide. The composite structure is then heated for the purpose of increasing the density of the silicon dioxide and to redistribute a portion of the impurity into the initial adherent layer of silicon dioxide.

• Figure 1 is a schematic diagram showing a system for depositing a layer of silicon dioxide including a preselected impurity on a body of semiconductor material.
• Figures 2 to 5 are cross-sectional views of a semiconductor die representing progressive stages in the process of the invention.

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