United States Patent 3,476,619
November 4, 1969

Semiconductor Device Stabilization
Donald L. Tolliver

Filed September 13, 1966
Image of US PATENT 3,476,619

Abstract of the Disclosure

A semiconductor device having one or more shallow PN junctions covered with an adherent layer of silicon dioxide, is stabilized by a process involving the steps of depositing an additional layer of silicon dioxide containing a preselected impurity, preferably phosphorus, on the adherent initial layer of silicon dioxide. The composite structure is then heated for the purpose of increasing the density of the silicon dioxide and to redistribute a portion of the impurity into the initial adherent layer of silicon dioxide.
Figure descriptions: cover graphic

  • Figure 1 is a schematic diagram showing a system for depositing a layer of silicon dioxide including a preselected impurity on a body of semiconductor material.
  • Figures 2 to 5 are cross-sectional views of a semiconductor die representing progressive stages in the process of the invention.

 Citations [54]:
2,899,344 08/1959 Atalla 3,264,707 08/1966 Eile 2,948,642 08/1960 MacDonald 3,200,619 08/1965 Scott 3,309,245 03/1967 Haenichen 3,341,381 09/1967 Bergman
National Museum of American History
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