United States Patent 3,477,885
November 11, 1969

Method For Producing A Structure Composed Of Mutually Insulated Semiconductor Regions For Integrated Circuits
Heinz Henker

Filed March 18, 1966
Image of US PATENT 3,477,885

Abstract of the Disclosure

Method of producing a structure composed of mutually insulated semiconductor regions for integrated circuits, which comprises placing a plurality of semiconductor bodies besides one another in face-to-face contact upon a heat-resistant support, said bodies having an insulating coating at least on the entire surface not contacting the support; then depositing a crystalline material upon the semiconductor bodies and the support while preserving said insulating coating and thereby completely embedding said semiconductor bodies and bonding them together to a single integral structure; and thereafter separating said structure from said support.
Figure descriptions: cover graphic

  • Figure 1 shows an assembly of components in cross section at an intermediate stage of the method.
  • Figure 2 shows a completed structure made according to the invention, also in cross section.

 Citations [54]:
3,332,137 07/1967 Kenny 3,343,255 09/1967 Donovan 3,381,182 04/1968 Thorton
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