United States Patent 3,479,237
November 15, 1969

Etch Masks On Semiconductor Surfaces
Arpada A. Bergh
Willem van Gelder

Filed April 8, 1966
Image of US PATENT 3,479,237

Abstract of the Disclosure

Patterns are etched in coatings of silicon nitride, aluminum oxide, or aluminum silicate by forming phosphoric acid resistant masks in silicon oxide, molybdenum or platinum using conventional photoresist procedures.
Figure descriptions: cover graphic

  • Figures 1, 2 and 3 show in partial cross section the successive steps in the masked etching method in accordance with this invention.

 Citations [54]:
3,406,043 10/1968 Balde
National Museum of American History
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