United States Patent 3,484,308
December 16, 1969

Semiconductor Device
Israel Arnold Lesk

Filed April 10, 1963
Image of US PATENT 3,484,308

Abstract of the Disclosure

A semiconductor body having a first region of one conductivity type adjacent a portion of one surface of the body, a second region of the opposite conductivity type surrounding the first region at the surface of the body and a third region of the opposite conductivity type adjoining the first two regions below the surface of the body, the third region have a lower resistivity than the second region.
Figure descriptions: cover graphic

  • Figure 1 shows the active element of a planar diode with a junction having a high resistivity P region peripheral about a planar N diffused region and with a lower resistivity P region beneath the other regions.
  • Figure 2 shows the steps in preparing an embodiment of this invention.
  • Figure 3 shows the preparation of another embodiment in which two selective diffusion operations are used to form the desired junction structure.

 Citations [54]:
3,194,699 07/1965 White
National Museum of American History
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