Abstract of the Disclosure

A semiconductor body having a first region of one conductivity type adjacent a portion of one surface of the body, a second region of the opposite conductivity type surrounding the first region at the surface of the body and a third region of the opposite conductivity type adjoining the first two regions below the surface of the body, the third region have a lower resistivity than the second region.

• Figure 1 shows the active element of a planar diode with a junction having a high resistivity P region peripheral about a planar N diffused region and with a lower resistivity P region beneath the other regions.
• Figure 2 shows the steps in preparing an embodiment of this invention.
• Figure 3 shows the preparation of another embodiment in which two selective diffusion operations are used to form the desired junction structure.

 Citations [54]:
  
3,194,699  07/1965  White