Abstract of the Disclosure

A process for locally controlling carrier lifetimes in semiconductor devices and integrated circuits by selectively gettering a metal impurity which is diffused into a semiconductor body in which the devices or circuits are constructed. A metal impurity gettering region is formed on the surface of the semiconductor body to getter the metal impurity in selected regions of the semiconductor body.

• Figure 1 illustrates a typical impurity concentration (C) profile within an N type semiconductor body which has been selectively doped with phosphorus, and diffused with the metal impurity gold.
• Figure 2 is a plan view of a semiconductor body in which a high speed NPN transistor and a PN storage diode have been constructed in accordance with the present invention.
• Figure 3 is a cross-section view of Figure 2 taken along lines 3-3 of Figure 2.

 Citations [54]:
  
3,440,113  04/1969  Wooley
3,440,114  04/1969  Harper