United States Patent 3,490,961
January 20, 1970

Method Of Producing Silicon Body
Rudolf G. Frieser
James J. Casey

Filed December 21, 1966
Image of US PATENT 3,490,961

Abstract of the Disclosure

A method of depositing an epitaxial layer of single crystal silicon on a silicon substrate by establishing an atmosphere containing a reducible and/or pyrolyzable silicon compound represented by the formula SinX2n+2 wherein X are halogen atoms, hydrogen atoms or any combination thereof and n has a value of 2 or more. Directing electromagnetic radiation through said atmosphere onto the surface of said substrate to effect epitaxial deposition of silicon thereon.
Figure descriptions: cover graphic

  • a cross-sectional view of the apparatus employed in carrying out the process of the invention.

 Citations [54]:
3,200,018 08/1965 Grossman
National Museum of American History
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