Abstract of the Disclosure

Disclosed is a method of fabricating a diffused junction transistor having high sheet resistance at the emitter-base interface and low sheet resistance at the base-base contact interface by diffusing a shallow region into a semiconductor body, forming an oxide with an opening exposing portions of the shallow region and heating the body to further diffuse the impurities and form the base region of the device.

• Figures 1-6 are sectional views of a portion of a semiconductor slice showing progressive steps in the fabrication of a transistor according to the processs of the invention.

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