United States Patent 3,490,964
January 20, 1970

Process Of Forming Semiconductor Devices By Masking And Diffusion
Charles Alexander

Filed April 29, 1966
Image of US PATENT 3,490,964

Abstract of the Disclosure

Disclosed is a method of fabricating a diffused junction transistor having high sheet resistance at the emitter-base interface and low sheet resistance at the base-base contact interface by diffusing a shallow region into a semiconductor body, forming an oxide with an opening exposing portions of the shallow region and heating the body to further diffuse the impurities and form the base region of the device.
Figure descriptions: cover graphic

  • Figures 1-6 are sectional views of a portion of a semiconductor slice showing progressive steps in the fabrication of a transistor according to the processs of the invention.

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National Museum of American History
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