United States Patent 3,491,434
January 27, 1970

Junction Isolation Diffusion
Richard L. Cunningham
Harold G Carlson

Filed January 28, 1965
Image of US PATENT 3,491,434

Abstract of the Disclosure

Disclosed is a method for forming planar semiconductor devices in which a region is formed at the existing intersection of a rectifying junction with the surface of the substrate by diffusing impurities through an aperture in an insulating layer on the surface of the substrate. The rectifying junction is then shifted from its original position to a new position of lower impurity concentration.
Figure descriptions: cover graphic

  • Figures 1A-1G are elevational views in section illustrating the process steps according to the invention in fabricating a mesa epitaxial semiconductor diode, with Figure 1G showing the finished device.

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National Museum of American History
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