United States Patent 3,492,175
January 27, 1970

Method Of Doping Semiconductor Material
Raymond W. Conrad
Robert W. Haisty
Edward W. Mehal

Filed December 17,1965
Image of US PATENT 3,492,175

Abstract of the Disclosure

Gallium arsenide containing a dopant impurity element is deposited from the vapor phase epitaxially on a heated gallium arsenide substrate. A metal-organic compound of the dopant entrained n a carrier gas is reacted with gallium arsenide vapor formed by passing arsenic trichloride in proximity to heated gallium. The flow rate of the carrier gas may be varied to produce a dopant gradient in the epitaxial deposit. By sequentially entraining metal-organic compounds of other dopant elements, rectifying junctions or transistor structures may be formed on the substrate.
Figure descriptions: cover graphic

  • an apparatus suitable for practicing the invention.

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2,778,802 01/1957 Willardson 3,312,570 04/1967 Ruenhrwein 3,173,814 03/1965 Law 3,312,571 04/1967 Ruenhrwein 3,224,913 12/1965 Ruehrwein 3,342,551 09/1967 Dotzer 3,226,270 12/1965 Miederer 3,310,502 03/1967 Komatsubara
National Museum of American History
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