United States Patent 3,493,811
February 3, 1970

Epitaxial Semiconductor Material On Dissimilar Substrate And Method For Producing The Same
Richard E. Ewing

Filed June 22, 1966
Image of US PATENT 3,493,811

Abstract of the Disclosure

This invention relates to gallium arsenide-gallium phosphide semiconductor material and has as its principal object the provision of an epitaxial layer of such semiconductor material on a substrate of gallium arsenide semiconductor material for use in injection electroluminescent p-n junction diodes and has as another object the provision of the method for producing an epitaxial layer of semiconductor material on a substrate of dissimilar semiconductor material with a minimum of strain between the substrate and epitaxial layer due to the different lattice constants involved.
Figure descriptions: cover graphic

  • the cross-sectional view of injection electroluminescent p-n junction diode of the present invention.

 Citations [54]:
3,201,664 08/1965 Adam 3,341,376 09/1967 Spenke 3,218,203 11/1965 Ruebrwein 3,224,913 12/1965 Ruebrwein 3,249,473 05/1966 Holonyak 3,261,726 07/1966 Ruebrwein
National Museum of American History
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