United States Patent 3,494,809
February 10, 1970

Semiconductor Processing
Carl A. Ross

Filed June 5, 1967
Image of US PATENT 3,494,809

Abstract of the Disclosure

Protection of the back side of a semiconductor wafer is provided by the use of a deposit of silicon nitride thereon during diffusion of active regions in the opposite side of the semiconductor wafer through an oxide mask.
Figure descriptions: cover graphic

  • Figures 1 through 4 are sectional views of a sequence in the preparation of integrated circuit components utilizing the present invention.

 Citations [54]:
3,321,340 05/1967 Murphy 3,373,051 03/1968 Chu 3,421,936 01/1969 Vogel
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