United States Patent 3,496,429
February 17, 1970

Solid State Light Sources
Robert J. Robinson

Filed August 21, 1967
Image of US PATENT 3,496,429

Abstract of the Disclosure

Efficient visible light emission at room temperatures and at wavelengths throughout all portions of the visible spectrum is achieved by minority carrier injection across a p-n junction in semiconductor diodes formed of hybrid solid solutions of IIIa-Va and IIb-VIa compounds. Spontaneous emission and stimulated emission operation of such diodes are described.
Figure descriptions: cover graphic

  • Figure 1 is a schematic cross-sectional view of a semiconductor diode light source embodying the present invention.
  • Figure 2 is a schematic cross-sectional view of a semiconductor injection laser beam embodying the invention.
  • Figure 3 is a schematic view of an illustrative apparatus useful for growing hybrid crystals for use in the devices of Figures 1 and 2.

 Citations [54]:
3,309,553 03/1967 Kroemer 3,374,176 03/1968 Potter 3,377,529 04/1968 Weiss 3,415,989 12/1968 Leventhal 3,427,211 02/1969 Foster
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