Abstract of the Disclosure

Efficient visible light emission at room temperatures and at wavelengths throughout all portions of the visible spectrum is achieved by minority carrier injection across a p-n junction in semiconductor diodes formed of hybrid solid solutions of IIIa-Va and IIb-VIa compounds. Spontaneous emission and stimulated emission operation of such diodes are described.

• Figure 1 is a schematic cross-sectional view of a semiconductor diode light source embodying the present invention.
• Figure 2 is a schematic cross-sectional view of a semiconductor injection laser beam embodying the invention.
• Figure 3 is a schematic view of an illustrative apparatus useful for growing hybrid crystals for use in the devices of Figures 1 and 2.

 Citations [54]:
  
3,309,553  03/1967  Kroemer
3,374,176  03/1968  Potter
3,377,529  04/1968  Weiss
3,415,989  12/1968  Leventhal
3,427,211  02/1969  Foster