Abstract of the Disclosure

Planar type semiconductive devices and integrated circuits suited for direct bonding to a packaging unit are provided wherein raised contact elements on the semiconductor devices are formed as homogeneous metal deposits metallurgically bonded to the metallization pattern on the semiconductor device. A process for forming such homogeneous metal deposits by electroforming is provided.

• Figure 1 is a schematic representation in plan view of a portion of a body of semiconductive material having a single transistor device formed therein, greatly exaggerated in size and not necessarily in exact proportions.
• Figure 2 is a schematic elevational view in cross section taken along line 2-2 of Figure 1.
• Figure 3 is a schematic elevational view in cross section taken along line 3-3 of Figure 1.
• Figures 4 through 6 are additional schematic elevational views corresponding to Figure 3 showing the device of this invention in various stages of fabrication.

 Citations [54]:
  
3,323,956  06/1967  Gee