United States Patent 3,501,681
March 17, 1970

Face Bonding Of Semiconductor Devices
Basil Weir

Filed July 19, 1966
Image of US PATENT 3,501,681

Abstract of the Disclosure

Planar type semiconductive devices and integrated circuits suited for direct bonding to a packaging unit are provided wherein raised contact elements on the semiconductor devices are formed as homogeneous metal deposits metallurgically bonded to the metallization pattern on the semiconductor device. A process for forming such homogeneous metal deposits by electroforming is provided.
Figure descriptions: cover graphic

  • Figure 1 is a schematic representation in plan view of a portion of a body of semiconductive material having a single transistor device formed therein, greatly exaggerated in size and not necessarily in exact proportions.
  • Figure 2 is a schematic elevational view in cross section taken along line 2-2 of Figure 1.
  • Figure 3 is a schematic elevational view in cross section taken along line 3-3 of Figure 1.
  • Figures 4 through 6 are additional schematic elevational views corresponding to Figure 3 showing the device of this invention in various stages of fabrication.

 Citations [54]:
3,323,956 06/1967 Gee
National Museum of American History
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