United States Patent 3,506,504
April 14, 1970

Method Of Making Shallow-Diffused Semiconductor Regions
Robert I. Luce

Filed September 26, 1967
Image of US PATENT 3,506,504

Abstract of the Disclosure

A process form making shallow-diffused semiconductor regions in which impurity diffusion is preceded by three separate impurity deposition steps, each deposition step being followed by an etch that removes any glass formed during the prior deposition step.
Figure descriptions: cover graphic

  • Figures 1A and 1B are sectional and plan views, respectively, of a semiconductor wafer as it is believed to appear prior to formation of a thin diffused region therein.
  • Figures 2 through 4 are sectional views of a portion of a semiconductor wafer which views are believed to depict successive stages in the production of a shallow-diffused region in accordance with the present invention.

 Citations [54]:
2,804,405 08/1957 Derick
National Museum of American History
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