United States Patent 3,508,324
April 28, 1970

Method Of Making Contacts To Semiconductor Devices
Stephen A. Idzik
Robert I. Luce

Filed February 13, 1967
Image of US PATENT 3,508,324

Abstract of the Disclosure

A method of producing ohmic contacts to a semiconductor crystal in which a film of aluminum is sintered at a temperature below 550 centigrade to the semiconductor crystal prior to delineation of the film.
Figure descriptions: cover graphic

  • Figures 1A and 1B through Figures 7A and 7B are plan and sectional views of a semiconductor device at separate stages of the manufacture thereof in accordance with the present invention.

 Citations [54]:
2,981,877 04/1961 Noyce 3,266,127 08/1966 Hardin 3,362,851 01/1968 Dunster
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