United States Patent 3,508,962
April 28, 1970

Epitaxial Growth Process
Harold M. Manasevit
William I. Simpson

Filed February 3, 1966
Image of US PATENT 3,508,962

Abstract of the Disclosure

The invention is directed to a process for growing an epitaxial film on a single crystal substrate comprising the steps of forming initially an extremely thin film of semiconductor material on a desired substrate or surface by thermal decomposition of a hydride. Subsequently, a thicker film is deposited or grown on the thin film by thermally decomposing a halide in a hydrogen atmosphere or a mixture of halides and hydrides in a hydrogen atmosphere.
Figure descriptions: cover graphic

  • an illustration of the apparatus used in depositing the films on the substrate.

 Citations [54]:
3,312,572 04/1967 Norton 3,341,376 09/1967 Spenke 3,160,521 12/1964 Ziegler
National Museum of American History
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