United States Patent 3,510,369
May 5, 1970

Selective Diffusion Masking Process
Frederick G. Ernick
Paul M. Kisinko

Filed March 18, 1968
Image of US PATENT 3,510,369

Abstract of the Disclosure

This invention provides a selective diffusion masking process which permits the fabrication of planar devices on lapped surfaces of semiconductor materials. The process entails the growing of an epitaxial lyaer of silicon carbide and selective etching of the same to provide the diffusion mask where desired on the lapped surface.
Figure descriptions: cover graphic

  • Figures 1 through 8 are cross-sectional views of a body in accordance with the teachings of this invention.

 Citations [54]:
3,157,541 11/1964 Heywang 3,228,812 01/1966 Blake 3,398,033 08/1968 Haga 3,406,049 10/1968 Marinace
National Museum of American History
HomeSearchChip TalkChip FunPatentsPeoplePicturesCreditsCopyrightComments