Abstract of the Disclosure

A transistor of the type which includes a substrate layer of one conductivity type on which is grown an epitaxial layer of opposite conductivity type, a part of which functions as the collector region of the device. Emitter and base regions are diffused into the epitaxial layer. A high conductivity pocket is provided within the substrate beneath the base region such that the area directly beneath the emiiter region is left free of diffused impurities.

• Figure 1 is a is a cross-section of a bipolar transistor of a type often included in integrated circuits and constructed according to the prior art.
• Figure 2 is a cross-section of a transistor similar to that of Figure 1 but with the improved structure of the present invention.

 Citations [54]:
  
3,260,902  07/1966  Porter