United States Patent 3,511,702
May 12, 1970

Epitaxial Growth Process From An Atmosphere Composed Of A Hydrogen Halide, Semiconductor Halide And Hydrogen
Don M. Jackson
Bernard W. Boland

Filed August 20, 1965
Image of US PATENT 3,511,702

Abstract of the Disclosure

The epitaxial growth of semiconductor layers is confined to selected areas with the use of an oxide mask. The simultaneous growth of polycrystalline semiconductor material on the oxide mask is prevented by the continuous addition of a small amount of hydrogen halide to the gaseous mixture passed through the epitaxial reactor.
Figure descriptions: cover graphic

  • a schematic diagram showing a system for selectively growing epitaxial layers in accordance with the method of the invention.

 Citations [54]:
3,392,069 07/1968 Merkel 3,218,205 11/1965 Ruehrwein 3,142,596 07/1964 Theuerer 3,243,323 03/1966 Corrigan 3,156,591 11/1964 Hale 3,265,542 08/1966 Hirshon 3,192,083 06/1965 Sirtl 3,296,040 01/1967 Wigton 3,200,018 08/1965 Grissman
National Museum of American History
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